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ZXMN10A09K
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
100
?
?
?
?
?
?
1
± 100
V
μA
nA
I D = 250 μ A, V GS = 0V
V DS = 100V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
V GS(th)
R DS (ON)
2
?
?
?
4
0.085
V
?
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 4.6A
0.100
V GS = 6V, I D = 4.2A
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
g fs
V SD
t rr
Q rr
?
?
?
?
10.7
0.850
40
62
?
0.950
?
?
S
V
ns
nC
V DS = 15V, I D = 4.6A
I S = 4.7A, V GS = 0V
I S = 3.0A, di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
C iss
C oss
C rss
Q g
Q g
?
?
?
?
?
1313
83
56
17.2
26.0
?
?
?
?
?
pF
pF
pF
nC
nC
V DS = 50V, V GS = 0V
f = 1MHz
V GS = 6V
V DS = 50V,
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Q gs
Q gd
t D(on)
?
?
?
5.6
7.6
6.8
?
?
?
nC
nC
ns
V GS = 10V
I D = 4.6A
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
t r
t D(off)
t f
?
?
?
5.3
27.5
12.3
?
?
?
ns
ns
ns
V DD = 50V, V GS = 10V
I D = 1.0A, R G ? 25 Ω
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
4 of 8
www.diodes.com
January 2010
? Diodes Incorporated
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